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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 VCEO(sus) = 200 Vdc (Min) -- MJH11020, 19 VCEO(sus) = 250 Vdc (Min) -- MJH11022, 21 * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A * Monolithic Construction MAXIMUM RATINGS MJH11017 * MJH11019 * MJH11021 * MJH11018 * MJH11020 * MJH11022 * *Motorola Preferred Device PNP NPN PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I II III I I I I IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII I I III I II IIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII MJH Rating Symbol VCEO VCB VEB IC IB PD 11018 11017 150 150 11020 11019 200 200 5.0 15 30 11022 11021 250 250 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak (1) Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate Above 25_C Operating and Storage Junction Temperature Range 150 1.2 Watts W/_C TJ, Tstg - 65 to + 150 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance. Junction to Case (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 160 v 10%. 0.83 _C/W CASE 340D-01 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I IIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) Collector-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) Fall Time Storage Time Rise Time Delay Time Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) Base-Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) Collector Cutoff Current (VCE = 75 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) (VCE = 125 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) 2 RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.: 1N5825 used above IB 100 mA MSD6100 used below IB 100 mA Characteristic Characteristic tr, tf 10 ns Duty Cycle = 1.0% (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) Figure 2. Switching Times Test Circuit MJH11018, MJH11020, MJH11022 MJH11017, MJH11019, MJH11021 v 2.0%. MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 V2 APPROX +12 V 0 V1 APPROX - 8.0 V For NPN test circuit, reverse diode and voltage polarities. Motorola Bipolar Power Transistor Device Data 25 s 51 Cob hFE hfe fT td ts tr tf VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Symbol ICEO IEBO ICEV For td and tr, D1 is disconnected and V2 = 0 RB D1 NPN Min 150 400 100 150 200 250 2.5 4.4 1.2 3.0 75 -- -- -- -- -- -- -- -- -- -- -- -- TUT Typical RC VCC 100 V 15,000 -- PNP Max 400 600 2.5 2.7 0.5 3.8 2.8 2.5 4.0 2.0 0.5 5.0 1.0 1.0 1.0 75 -- -- -- -- -- SCOPE mAdc mAdc mAdc Unit Unit Vdc Vdc Vdc Vdc pF s s s ns -- -- -- + 4.0 V MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.05 0.02 0.01 RJC(t) = r(t) RJC RJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 P(pk) D = 0.5 0.2 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 0.02 0.03 0.05 Figure 3. Thermal Response IC, COLLECTOR CURRENT (AMPS) TC = 25C SINGLE PULSE 30 20 10 5.0 2.0 1.0 0.5 0.2 0 0.5 ms 1.0 ms 5.0 ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 2.0 3.0 5.0 10 20 30 50 100 150 250 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 ms FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) 30 IC, COLLECTOR CURRENT (AMPS) L = 200 H IC/IB1 50 TC = 100C VBE(off) = 0 - 5.0 V RBE = 47 DUTY CYCLE = 10% REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. 20 10 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 0 0 20 220 260 140 60 100 180 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) Motorola Bipolar Power Transistor Device Data 3 MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 PNP 10,000 7000 5000 hFE, DC CURRENT GAIN 3000 2000 1000 500 - 55C TC = 150C 25C 10,000 VCE = 5.0 V hFE, DC CURRENT GAIN 5000 VCE = 5.0 V TC = 150C 2000 1000 500 - 55C 200 100 0.2 0.3 0.5 0.7 1.0 3.0 5.0 10 15 0.2 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 25C NPN 200 100 Figure 6. DC Current Gain PNP VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.0 2.0 3.0 5.0 10 20 30 50 IC = 15 A IC = 10 A IC = 5.0 A 100 200 300 500 1000 IB, BASE CURRENT (mA) TJ = 25C 4.5 4.0 3.5 3.0 IC = 15 A 2.5 2.0 1.5 1.0 1.0 IC = 5.0 A 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) IC = 10 A TJ = 25C NPN Figure 7. Collector Saturation Region PNP 4.0 3.5 3.0 VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 100 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.5 0.2 0.5 0.7 1.0 1.0 VBE(sat) @ IC/IB = 100 VOLTAGE (VOLTS) TJ = 25C 4.0 3.5 3.0 2.5 2.0 1.5 TJ = 25C NPN VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 PNP MJH11017 MJH11019 MJH11021 COLLECTOR MJH11018 MJH11020 MJH11022 NPN COLLECTOR BASE BASE EMITTER EMITTER Figure 9. Darlington Schematic Motorola Bipolar Power Transistor Device Data 5 MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078 U S K L 1 2 4 A 3 DIM A B C D E G H J K L Q S U V D V G J H STYLE 1: PIN 1. 2. 3. 4. CASE 340D-01 SOT 93, TO-218 TYPE ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJH11017/D* MJH11017/D |
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